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2SK2687-01
FAP-IIS Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
0,01 50A
60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 50 200 16 520 60 150 -55 ~ +150
* L=0,277mH, VCC=12V
> Equivalent Circuit
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=25A VGS=4V VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=50A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=2xIDR VGS=0V -dIF/dt=100A/s Tch=25C
Min. 30 1,0
Typ. 1,5 10 0,2 10 0,012 0,0075 45 2750 1300 600 13 180 55 150 1,14 85 0,17
Max. 2,0 500 1,0 100 0,017 0,01 4130 1950 900 20 270 83 230 1,71 130
22
50
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 75 2,08
Unit C/W C/W
N-channel MOS-FET
30V
0,01 50A
2SK2687-01
FAP-IIS Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=25A; VGS=10V
60W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
1
RDS(ON) [m]
2
ID [A]
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [m]
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=50A; TC=25C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test; Tch=25C
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
EAV=f(starting Tch): VCC=12V; IAV 50A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Transient Thermal impedance
EAV [mJ]
10
ID [A]
12
Zth(ch-c) [K/W]
Zthch=f(t) parameter:D=t/T
starting Tch [C]
VDS [V]
t [s]
This specification is subject to change without notice!
N-channel MOS-FET
30V
0,01 50A
2SK2687-01
FAP-IIS Series
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=15V,VGS=10V, RG=10
60W
> Characteristics
Power Dissipation PD=f(TC)
120 100 PD / PDmax [%] 80 60 40 20 0 0 25 50 75 TC [C] 100 125 150
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
110 100 90 80 IAV / IAVmax [%] 70 60 50 40 30 20 10 0 0 25 50 75 starting Tch [C] 100 125 150
This specification is subject to change without notice!

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